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Prog. Photovolt: Res. Appl. 2004; 12:529–538 Published online 29 July 2004 in Wiley InterScience (). DOI: 10.1002/pip.544 Nine different types of shunt have been found in state-of-the-art mono- and multi-crystalline solar cells by lock-in thermography and identified by SEM investigation (including EBIC), TEM and EDX.
However, we have found that in state-of-the-art silicon solar cells most shunts show a nonlinear (diode-like) I–V character-istic. The linearity of the shunt characteristic can easily be checked by comparing lock-in thermograms taken at 0 5 V forward bias with thermograms taken at 0 5 V reverse bias.
Information related to quantum of power losses due to the presence of shunts in industrial silicon solar cells can play an important role in process control and improvement of solar cell production. Shunts can broadly be classified into two broad categories based on the origin: process induced shunts and material related shunts [ 2 ].
In the traditional inter-pretation of I–V characteristics of solar cells all nonlinear currents belonged to the cell, and only ohmic current paths across the pn junction have been attributed to ‘shunts’.
Six shunt types are pro-cess-induced, and three are caused by grown-in defects of the material. The most important process-induced shunts are residues of the emitter at the edge of the cells, cracks, recombination sites at the cell edge, Schottky-type shunts below grid lines, scratches, and aluminum particles at the surface.
The stripe is a remainder of the emitter, which was not ‘opened’ by the edge insulation procedure. So linear edge shunts are usually due to an incompletely opened emitter at the edge. Those edge shunts which appear in Figure 1 predominantly under forward bias (þ0 5 V), show a nonlinear (diode-like) I–V characteristic.
The most important process-induced shunts are residues of the emitter at the edge of the cells, cracks, recombination sites at the cell edge, Schottky-type shunts below grid …
In most cases shunts caused by process-induced defects are dominating the current–voltage characteristic at the maximum power point of the solar cell. In commercial …
The authors present a careful study of the time/voltage dependence of these current transients in several different a-Si solar cell structures and find they reveal more about …
In most cases shunts caused by process-induced defects are dominating the …
The effect of shunt resistance on fill factor in a solar cell. The area of the solar cell is 1 cm 2, the cell series resistance is zero, temperature is 300 K, and I 0 is 1 x 10-12 A/cm 2.Click on the graph for numerical data. An estimate for the value …
To identify local shunts in perovskite-silicon tandem cells, we first employed a photoluminescence (PL) imaging technique, as this has been widely used to detect local …
Six shunt types are process‐induced, and three are caused by grown‐in defects of the material. The most important process‐induced shunts are residues of the emitter at the …
Shunt Resistance; Impact of Both Series and Shunt Resistance; 4.4. Other Effects; ... Rear Contact Solar Cells; 6.4. Solar Cell Production Line; Source Material; Growing Ingots; Sawing …
The most important process-induced shunts are residues of the emitter at the …
The inhomogeneity of the forward current in a solar cell can be measured …
The most important process-induced shunts are residues of the emitter at the edge of the cells, cracks, recombination sites at the cell edge, Schottky-type shunts below grid …
Nine different types of shunt have been found in state-of-the-art mono- and multicrystalline solar cells by lock-in thermography and identified by SEM investigation (including EBIC), TEM and …
talline silicon solar cell which contains material-induced shunts. The shunting regions are shown in the LIT image as bright regions and in the LBIC image as dark regions. The LIT image (b) …
talline silicon solar cell which contains material-induced shunts. The shunting regions are …
Nine different types of shunts have been found in state of the art multicrystalline solar cells by lock-in thermography and identified by SEM-investigation (incl. EBIC), TEM and …
3.1 Shunts in solar cells on Czochralski silicon Figure 1 shows a thermogram of a 10*10 cm² solar cell on Czochralski silicon with a diffused emitter. The strongest shunt in this cell is beyond a …
shunts in multicrystalline silicon solar cells originated at crystal defects such as grain boundaries, precipitates, or dislocations. However, our investigations on hundreds of cells have revealed …
Since a perfect solar cell does not exist, the model also includes a shunt resistance and a serial resistance section to mimic an ideal solar cell working in tandem with a …